Scanning tunneling microscopy images of Al0.2GA0.8As-{110}: Influence of applied bias voltage and comparison between filled- and empty-states images
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
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1. Possible applications of scanning frequency comb microscopy for carrier profiling in semiconductors;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2014-12-31
2. Composition and strain dependence of band offsets at metamorphicInxGa1−xAs∕InyAl1−yAsheterostructures;Physical Review B;2005-05-02
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