Bulk and surface electronic structure of InAs(110)-Reference-Cited by-同舟云学术

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Bulk and surface electronic structure of InAs(110)

Published:1998-02 Issue:3 Volume:398 Page:395-406
ISSN:0039-6028
Container-title:Surface Science
language:en
Short-container-title:Surface Science

Author:

Andersson C.B.M.,Andersen J.N.,Persson P.E.S.,Karlsson U.O.

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Reference37 articles.

1. Photoelectron spectroscopy of surface states on semiconductor surfaces

2. Total-energy calculations of semiconductor surface reconstructions

3. Surface structures of tetrahedrally coordinated semiconductors: principles, practice, and universality

4. Twenty years of semiconductor surface and interface structure determination and prediction: The role of the annual conferences on the physics and chemistry of semiconductor interfaces

5. Thirty years of atomic and electronic structure determination of surfaces of tetrahedrally coordinated compound semiconductors

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Phonon-Enabled Carrier Transport of Localized States at Non-Polar Semiconductor Surfaces: A First-Principles-Based Prediction;The Journal of Physical Chemistry Letters;2016-08-26

2. Low-Temperature Scanning Tunneling Microscopy of Ring-Like Surface Electronic Structures Around Co Islands on InAs(110) Surfaces;Journal of Nanoscience and Nanotechnology;2009-08-01

3. Model GW band structure ofInAsandGaAsin the wurtzite phase;Physical Review B;2007-06-22

4. Electronic structure and reflectance anisotropy spectrum ofInAs(110);Physical Review B;2005-03-31

5. Contributions of the escape depth to the photoelectron intensity of a well-defined initial state;Physical Review B;2004-08-25

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