Electronic structure and reflectance anisotropy spectrum ofInAs(110)-Reference-Cited by-同舟云学术

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Electronic structure and reflectance anisotropy spectrum ofInAs(110)

Published:2005-03-31 Issue:12 Volume:71 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

López-Lozano X.,Pulci O.,Noguez C.,Fleischer K.,Del Sole R.,Richter W.

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.71.125337/fulltext

Reference48 articles.

1. Dynamical analysis of low-energy electron-diffraction intensities from InAs(110)

2. Surfaces and Interfaces of Solids

3. Surface structure, bonding, and dynamics: Universality of zinc blende (110) potential energy surfaces

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1. Real Space Imaging of Topological Edge States in InAs/GaSb and InAs/InxGa1–xSb Quantum Wells;ACS Nano;2019-11-01

2. Phonon-Enabled Carrier Transport of Localized States at Non-Polar Semiconductor Surfaces: A First-Principles-Based Prediction;The Journal of Physical Chemistry Letters;2016-08-26

3. Layer-by-layer analysis of the linear optical response of clean and hydrogenated Si(100) surfaces;Physical Review B;2006-08-16

4. Spin-orbit effects on the optical anisotropy of semiconductor surfaces;physica status solidi (b);2005-12

5. Electronic excitations in solids: Density functional and Green's function theory;physica status solidi (b);2005-11

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