Affiliation:
1. National Institute for Astrophysics, Optics and Electronics, INAOE, Puebla, Z.P. 72840 Puebla, México.
2. Technology and Engineering Institute, Ciudad Juarez University UACJ, Av. Del Charro 450N, Z. P. 32310 Chihuahua, Mexico.
Abstract
In this work we have performed an exploratory study of the infrared (IR) sensing properties of polymorphous silicon–germanium (pm-SixGey:H) thin films. Our objective was to study the characteristics that are important parameters for infrared detection, as activation energy (Ea), thermal coefficient of resistance (TCR), room temperature conductivity (σRT), and responsivity to IR radiation. After characterization, our results demonstrated that pm-SiGe:H films have advantages over a-Si:H,B, pm-Si:H, and pm-Ge:H, because of the possibility to tailor its properties as σRT, Ea, and TCR, and moreover, the possibility to adjust those values for specific applications.
Publisher
Canadian Science Publishing
Subject
General Physics and Astronomy
Cited by
8 articles.
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