The Electrical Characterization of Hydrogenated Amorphous Silicon Germanium Film Used in Un-Cooled Micro-Bolometer

Abstract

In this paper, the deposition and the electrical characterization of hydrogenated amorphous silicon germanium (a-SixGey:H) thin films were performed by plasma enhanced chemical vapour deposition (PECVD) at low temperature with different flow ratios of SiH4/GeH4. The temperature coefficient of resistance (TCR) and temperature dependence of conductivity were measured to study the influence of deposition parameter. The resistance uniformity were also investigated. The result showed that the film presented high TCR values of around 3.5%K-1and moderate conductivity value of 1.47×10-3(Ω•cm)-1respectively at room temperature, while the non-uniformity below 5% which indicated the high resistance uniformity in films.