Boron-doped hydrogenated mixed-phase silicon as thermo-sensing films for infrared detectors-Reference-Cited by-同舟云学术

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Boron-doped hydrogenated mixed-phase silicon as thermo-sensing films for infrared detectors

Published:2018-02 Issue: Volume:74 Page:165-169
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Phong Pham Duy,Park Jinjoo,Shin Chonghoon,Kim Sangho,Nam Yonghyun,Kim Geunho,Kim Minsik,Yi Junsin

Funder

Ministry of Trade, Industry & Energy, Republic of Korea

National Research Foundation of Korea

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference34 articles.

1. Low-cost uncooled infrared detectors in CMOS process;Eminoglu;Sens. Actuators A: Phys.,2003

2. An overview of uncooled infrared sensors technology based on amorphous silicon and silicon-germanium alloys;Ambrosio;Phys. Status Solidi (C),2010

3. A microbolometer fabrication process using polymorphous silicon-germanium films (pm-SixGey:H) as thermosensing material;Calleja;Phys. Status Solidi (A),2016

4. Bolometers for infrared and millimeter waves;Richards;J. Appl. Phys.,1994

5. Influence of microstructure and composition on hydrogenated silicon thin film properties for uncooled microbolometer applications;Saint John;J. Appl. Phys.,2011

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