Effect of Pressure and Flow Rates on Polymorphous Silicon-Germanium (pm-Six Ge1−x :H) Thin Films for Infrared Detection Applications-Reference-Cited by-同舟云学术

Effect of Pressure and Flow Rates on Polymorphous Silicon-Germanium (pm-Six Ge1−x :H) Thin Films for Infrared Detection Applications

Published:2018-02-28 Issue:12 Volume:215 Page:1700735
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Jiménez Ricardo¹^ORCID,Moreno Mario¹,Torres Alfonso¹,Rosales Pedro¹,Gomez Víctor¹,Carlos Netzahualcoyotl¹,Roca i Cabarrocas Pere²

Affiliation:

1. National Institute of Astrophysics, Optics and Electronics, INAOE; Puebla C.P. 72840 México

2. Laboratory of Physics of Interfaces and Thin Films, Ecole Polytechnique, CNRS; Palaiseau 91128 France

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssa.201700735/fullpdf

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3. Properties of a new a-Si:H-like material: hydrogenated polymorphous silicon

4. Properties of polymorphous silicon–germanium alloys deposited under high hydrogen dilution and at high pressure

5. Study of polymorphous silicon and germanium as thermo-sensing films for infrared detectors

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