Selective Etching of HfO2 by Using Inductively-Coupled Ar/C4F8 Plasmas and the Removal of Etch Residue on Si by Using an O2 Plasma Treatment-Reference-Cited by-同舟云学术

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Selective Etching of HfO2 by Using Inductively-Coupled Ar/C4F8 Plasmas and the Removal of Etch Residue on Si by Using an O2 Plasma Treatment

Published:2008-09-12 Issue:3 Volume:53 Page:1675-1679
ISSN:0374-4884
Container-title:Journal of the Korean Physical Society
language:en
Short-container-title:J. Korean Phy. Soc.

Author:

Min K. S.,Park B. J.,Kim S. W.,Kang S. K.,Yeom G. Y.,Heo S. H.,Hwang H. S.,Kang C. Y.

Publisher

Korean Physical Society

Subject

General Physics and Astronomy

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The role of nitrogen addition in C4F8/Ar plasma to modulate the plasma process from polymerization to etching;Vacuum;2023-10

2. Modeling of Gate Stack Patterning for Advanced Technology Nodes: A Review;Micromachines;2018-11-29

3. Atomic layer deposited oxide films as protective interface layers for integrated graphene transfer;Nanotechnology;2017-11-06

4. On the Etching Characteristics and Mechanisms of HfO₂ Thin Films in CF₄/O₂/Ar and CHF₃/O₂/Ar Plasma for Nano-Devices;Journal of Nanoscience and Nanotechnology;2014-12-01

5. Modeling of electron temperature and DC bias voltage in an inductively-coupled Cl 2 /Ar plasma using neural network;Surface and Coatings Technology;2013-09

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