The role of nitrogen addition in C4F8/Ar plasma to modulate the plasma process from polymerization to etching

Author:

Park WoojinORCID,Han JongguORCID,Park SoleeORCID,Moon Se YounORCID

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation

Reference46 articles.

1. Fluorocarbon assisted atomic layer etching of SiO2 and Si using cyclic Ar/C4F8 and Ar/CHF3 plasma;Chen;J. Vac. Sci. Technol. A,2016

2. Multiscale approach for simulation of silicon etching using SF6/C4F8 Bosch process;Rhallabi;J. Vac. Sci. Technol. A,2017

3. A comparative study of CF4/O2/Ar and C4F8/O2/Ar plasmas for dry etching applications;Chun;Thin Solid Films,2015

4. Time‐modulated electron cyclotron resonance plasma discharge for controlling generation of reactive species;Samukawa;Appl. Phys. Lett.,1993

5. Role of CF2 in the etching of SiO2, Si3N4 and Si in fluorocarbon plasma;Lele;J. Semiconduct.,2009

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