Electron Tunneling Enhancement in MoS<sub>2</sub>/Hexagonal Boron Nitride/Multilayer Graphene Heterostructures by Bubble Formation-Reference-Cited by-同舟云学术

Electron Tunneling Enhancement in MoS₂/Hexagonal Boron Nitride/Multilayer Graphene Heterostructures by Bubble Formation

Published:2022-09-30 Issue:5 Volume:31 Page:110-112
ISSN:2288-6559
Container-title:Applied Science and Convergence Technology
language:en
Short-container-title:Appl. Sci. Converg. Technol.

Author:

Gwon Oh Hun¹^ORCID,Jang Seo Gyun¹^ORCID,Kim Jong Yun²^ORCID,Kim Han Seul³^ORCID,Yu Young-Jun¹²^ORCID

Affiliation:

1. Department of Physics, Chungnam National University, Daejeon 34134, Republic of Korea

2. Institute of Quantum Systems, Chungnam National University, Daejeon 34134, Republic of Korea

3. Center for Supercomputing Applications, National Institute of Supercomputing and Networking, Korea Institute of Science and Technology Information, Daejeon 34141, Republic of Korea

Publisher

The Korean Vacuum Society

Subject

Electrical and Electronic Engineering,Physical and Theoretical Chemistry,Condensed Matter Physics,Materials Science (miscellaneous),General Medicine

Link

http://pdf.medrang.co.kr/ASCT/2022/031/ASCT031-05-03.pdf

Reference29 articles.

1. Layered memristive and memcapacitive switches for printable electronics

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3. Graphene Flash Memory

4. Optoelectronic Memory Using Two-Dimensional Materials

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