Robust memristors based on layered two-dimensional materials-Reference-Cited by-同舟云学术

Robust memristors based on layered two-dimensional materials

Published:2018-02 Issue:2 Volume:1 Page:130-136
ISSN:2520-1131
Container-title:Nature Electronics
language:en
Short-container-title:Nat Electron

Author:

Wang Miao,Cai Songhua,Pan Chen,Wang Chenyu,Lian Xiaojuan,Zhuo Ye^ORCID,Xu Kang,Cao Tianjun,Pan Xiaoqing,Wang Baigeng,Liang Shi-Jun,Yang J. Joshua^ORCID,Wang Peng^ORCID,Miao Feng^ORCID

Publisher

Springer Science and Business Media LLC

Subject

Electrical and Electronic Engineering,Instrumentation,Electronic, Optical and Magnetic Materials

Link

http://www.nature.com/articles/s41928-018-0021-4.pdf

Reference55 articles.

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2. Strukov, D. B., Snider, G. S., Stewart, D. R. & Williams, R. S. The missing memristor found. Nature 453, 80–83 (2008).

3. Yang, J. J. et al. Memristive switching mechanism for metal/oxide/metal nanodevices. Nat. Nanotech. 3, 429–433 (2008).

4. Waser, R. & Aono, M. Nanoionics-based resistive switching memories. Nat. Mater. 6, 833–840 (2007).

5. Wong, H. S. P. et al. Metal-oxide RRAM. Proc. IEEE 100, 1951–1970 (2012).

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