Demonstration of Nonvolatile Storage and Synaptic Functions in All-Two-Dimensional Floating-Gate Transistors Based on MoS<sub>2</sub> Channels-Reference-Cited by-同舟云学术

Demonstration of Nonvolatile Storage and Synaptic Functions in All-Two-Dimensional Floating-Gate Transistors Based on MoS₂ Channels

Published:2023-07-27 Issue:8 Volume:5 Page:4354-4362
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Li Wei¹^ORCID,Li Jiaying¹,Chen Yuhua¹,Chen Zhanzi¹,Li Weilin¹,Wang Zhuowen¹,Mu Tianhui¹,Chen Zhao¹,Yang Ruijing¹,Meng Ziqian¹,Wang Yucheng¹,Li Feng¹²,Wang Shaoxi¹^ORCID

Affiliation:

1. School of Microelectronics, Northwestern Polytechnical University, 127 Youyi West Road, Xi’an, Shaanxi 710072, People’s Republic of China

2. Yangtze River Delta Research Institute, Northwestern Polytechnical University, No.27 Zigang Road, Science and Education New Town, Taicang 215400, People’s Republic of China

Funder

China Postdoctoral Science Foundation

Natural Science Basic Research Program of Shaanxi Province

National Natural Science Foundation of China

Key Research and Development Projects of Shaanxi Province

Basic Research Programs of Taicang

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.3c00595