Violet semipolar (20-2-1) InGaN microcavity light-emitting diode with a 200 nm ultra-short cavity length
Author:
Funder
Solid State Lighting and Energy Electronics Center, University of California Santa Barbara
Simons Foundation
Publisher
The Optical Society
Subject
Atomic and Molecular Physics, and Optics
Reference35 articles.
1. GaN Technology for Power Electronic Applications: A Review
2. Review of Commercial GaN Power Devices and GaN-Based Converter Design Challenges
3. Modulation bandwidth studies of recombination processes in blue and green InGaN quantum well micro-light-emitting diodes
4. III-Nitride full-scale high-resolution microdisplays
5. High-Efficiency Blue and True-Green-Emitting Laser Diodes Based on Non-c-Plane Oriented GaN Substrates
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