580-nm-thick vertical-structure light-emitting diode for visible light communication

Abstract

Visible light communication (VLC) is a key technology for 6G. Here, we propose, fabricate, and characterize a vertical-structure light-emitting diode (VSLED) to manage the dilemma of both power and speed for VLCs. Ultrathin VSLED architecture offers the unique features of decreasing the RC time constant for increasing modulation bandwidth and reducing confined optical modes inside the diode for enhancing light extraction. A 580-nm-thick VSLED with a dominant emission wavelength of 427.8 nm is implemented on a 2-in. metal-based bonded III-nitride-on-silicon wafer. Based on a bit-loading discrete multitone modulation scheme, we establish a visible light communication system using 1 × 1 mm2 VSLED, which can achieve a data transmission rate of 608 Mbps at a baud rate of 200 MBaud.