Enhanced direct-gap light emission from Si-capped n^+-Ge epitaxial layers on Si after post-growth rapid cyclic annealing: impact of non-radiative interface recombination toward Ge/Si double heterostructure lasers
Author:
Funder
National Institute of Information and Communication Technology
Publisher
The Optical Society
Subject
Atomic and Molecular Physics, and Optics
Reference29 articles.
1. An electrically pumped germanium laser
2. Strain-induced band gap shrinkage in Ge grown on Si substrate
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4. Electrically pumped lasing from Ge Fabry-Perot resonators on Si
5. Tensile-strained, n-type Ge as a gain medium for monolithic laser integration on Si
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