Direct Bandgap Control by Narrowing the Germanium Strip Structure on Silicon for C+L Band Photonic Devices
Author:
Affiliation:
1. Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology, Toyohashi, Japan
2. Photonics Electronics Technology Research Association (PETRA), Tsukuba, Japan
Funder
Japan Society for the Promotion of Science
Casio Science Promotion Foundation
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics
Link
http://xplorestaging.ieee.org/ielx7/3/9849711/09870802.pdf?arnumber=9870802
Reference53 articles.
1. Band lineups and deformation potentials in the model-solid theory
2. Silicon-Germanium Stressors for Germanium Photonic Devices on Silicon
3. High-Speed GeSi Electroabsorption Modulator on the SOI Waveguide Platform
4. Ge/SiGe Quantum Well Waveguide Modulator Monolithically Integrated With SOI Waveguides
5. High-speed Ge/Si electro-absorption optical modulator in C-band operation wavelengths
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