Raman scattering as a characterization tool for epitaxial GaN thin films grown on sapphire by turbo disk metal-organic chemical vapor deposition
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Publisher
The Optical Society
Reference22 articles.
1. III-V nitrides for electronic and optoelectronic applications
2. GaN, AlN, and InN: A review
3. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
4. High Quality P‐Type GaN Deposition on c‐Sapphire Substrates in a Multiwafer Rotating‐Disk Reactor
5. Investigation of n- and p-type doping of GaN during epitaxial growth in a mass production scale multiwafer-rotating-disk reactor
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