High Quality P‐Type GaN Deposition on c‐Sapphire Substrates in a Multiwafer Rotating‐Disk Reactor-Reference-Cited by-同舟云学术

High Quality P‐Type GaN Deposition on c‐Sapphire Substrates in a Multiwafer Rotating‐Disk Reactor

Published:1995-09-01 Issue:9 Volume:142 Page:L163-L165
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:
Short-container-title:J. Electrochem. Soc.

Author:

Yuan C.¹²³⁴,Salagaj T.¹²³⁴,Gurary A.¹²³⁴,Zawadzki P.¹²³⁴,Chern C. S.¹²³⁴,Kroll W.¹²³⁴,Stall R. A.¹²³⁴,Li Y.¹²³⁴,Schurman M.¹²³⁴,Hwang C. ‐Y.¹²³⁴,Mayo W. E.¹²³⁴,Lu Y.¹²³⁴,Pearton S. J.¹²³⁴,Krishnankutty S.¹²³⁴,Kolbas R. M.¹²³⁴

Affiliation:

1. EMCORE Research Laboratory, Somerset, New Jersey 08873, USA

2. Rutgers‐The State University, Piscataway New Jersey 08855, USA

3. Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611, USA

4. Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, North Carolina 27695, USA

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/1.2048735/pdf

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