Erbium-doped AlN epilayers synthesized by metal-organic chemical vapor deposition-Reference-Cited by-同舟云学术

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Erbium-doped AlN epilayers synthesized by metal-organic chemical vapor deposition

Published:2015-02-25 Issue:3 Volume:5 Page:648
ISSN:2159-3930
Container-title:Optical Materials Express
language:en
Short-container-title:Opt. Mater. Express

Author:

Al Tahtamouni Talal Mohammed,Du Xiaozhang,Lin Jingyu,Jiang Hongxing

Funder

JTO/ARO

William J. Fulbright Commission of the United States

Fulbright Committee in Jordan

Fulbright Visiting Scholarship at Texas Tech University

AT&T Foundation

Publisher

The Optical Society

Subject

Electronic, Optical and Magnetic Materials

Reference25 articles.

1. Electroluminescent properties of erbium-doped III–N light-emitting diodes

2. THE SPECTROSCOPY OF RARE EARTH DOPED CHALCOGENIDES

3. 1.54‐μm luminescence of erbium‐implanted III‐V semiconductors and silicon

4. Photoluminescence spectroscopy of erbium implanted gallium nitride

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Erbium energy levels in GaN grown by hydride vapor phase epitaxy;AIP Advances;2020-12-01

2. Current injection 154 µm light-emitting devices based on Er-doped GaN/AlGaN multiple quantum wells;Optical Materials Express;2016-10-10

3. Sol–gel synthesis, structural, optical and magnetic characterization of Ag3(2+x)PrxNb4−xO11+δ (0.0 ≤ x ≤ 1.0) nanoparticles;RSC Advances;2016

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