Temperature-dependent characteristics of GeSn/Ge multiple-quantum-well photoconductors on silicon
Author:
Funder
Ministry of Science and Technology, Taiwan
Publisher
The Optical Society
Subject
Atomic and Molecular Physics, and Optics
Reference26 articles.
1. The Past, Present, and Future of Silicon Photonics
2. Infrared Detectors
3. Surface dark current mechanisms in III-V infrared photodetectors [Invited]
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5. Optical critical points of thin-filmGe1−ySnyalloys: A comparativeGe1−ySny∕Ge1−xSixstudy
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2. Growth of single-crystalline GeSn films with high-Sn content on InP substrates by sputtering and rapid thermal annealing;Applied Surface Science;2024-06
3. High-performance GeSi/Ge multi-quantum well photodetector on a Ge-buffered Si substrate;Optics Letters;2024-05-13
4. Sputtering-grown undoped GeSn/Ge multiple quantum wells on n-Ge for low-cost visible/shortwave infrared dual-band photodetection;Applied Surface Science;2024-05
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