Affiliation:
1. University of Sheffield
2. University of Virginia
3. University of Illinois
Abstract
High sensitivity avalanche photodiodes (APDs) operating at eye-safe
infrared wavelengths (1400–1650 nm) are essential
components in many communications and sensing systems. We report the
demonstration of a room temperature, ultrahigh gain (
M
=
278
,
λ
=
1550
n
m
,
V
=
69.5
V
,
T
=
296
K
) linear mode APD on an InP substrate
using a
G
a
A
s
0.5
S
b
0.5
/
A
l
0.85
G
a
0.15
A
s
0.56
S
b
0.44
separate absorption, charge, and
multiplication (SACM) heterostructure. This represents
∼
10
×
gain improvement (
M
=
278
) over commercial, state-of-the-art
InGaAs/InP-based APDs (
M
∼
30
) operating at 1550 nm. The
excess noise factor is extremely low (
F
<
3
) at
M
=
70
, which is even lower than Si APDs.
This design gives a quantum efficiency of 5935.3% at maximum gain.
This SACM APD also shows an extremely low temperature breakdown
sensitivity (
C
b
d
) of
∼
11.83
m
V
/
K
, which is
∼
10
×
lower than equivalent InGaAs/InP
commercial APDs. These major improvements in APD performance are
likely to lead to their wide adoption in many photon-starved
applications.
Funder
Directed Energy–Joint Technology
Office
Engineering and Physical Sciences
Research Council
Subject
Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Cited by
15 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献