Influence of carrier localization on high-carrier-density effects in AlGaN quantum wells
Author:
Publisher
The Optical Society
Subject
Atomic and Molecular Physics, and Optics
Reference22 articles.
1. Spontaneous emission of localized excitons in InGaN single and multiquantum well structures
2. Enhanced room-temperature luminescence efficiency through carrier localization in AlxGa1−xN alloys
3. The consequences of high injected carrier densities on carrier localization and efficiency droop in InGaN/GaN quantum well structures
4. Efficiency droop and incomplete carrier localization in InGaN/GaN quantum well light-emitting diodes
5. Understanding efficiency droop effect in InGaN/GaN multiple-quantum-well blue light-emitting diodes with different degree of carrier localization
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1. Temperature-Dependent Optical Behaviors and Demonstration of Carrier Localization in Polar and Semipolar AlGaN Multiple Quantum Wells;Crystals;2023-07-08
2. Origin of carrier localization in AlGaN-based quantum well structures and implications for efficiency droop;Applied Physics Letters;2020-09-08
3. High-brightness lasing at submicrometer enabled by droop-free fin light-emitting diodes (LEDs);Science Advances;2020-08-14
4. Carrier Dynamics in Al‐Rich AlGaN/AlN Quantum Well Structures Governed by Carrier Localization;physica status solidi (b);2020-08-07
5. Strongly localized carriers in Al-rich AlGaN/AlN single quantum wells grown on sapphire substrates;Journal of Applied Physics;2020-03-07
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