The consequences of high injected carrier densities on carrier localization and efficiency droop in InGaN/GaN quantum well structures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3703062
Reference47 articles.
1. On the efficiency droop in InGaN multiple quantum well blue light emitting diodes and its reduction with p-doped quantum well barriers
2. Carrier leakage in InGaN quantum well light-emitting diodes emitting at 480 nm
3. Blue-emitting InGaN–GaN double-heterostructure light-emitting diodes reaching maximum quantum efficiency above 200A∕cm2
4. On resonant optical excitation and carrier escape in GaInN/GaN quantum wells
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