Affiliation:
1. Chinese Academy of Sciences
2. University of Chinese Academy of Sciences
3. Guangdong Greater Bay Area Applied Research Institute of Integrated Circuit and Systems
Abstract
Plasmonic lithography can make the evanescent wave at the mask be resonantly amplified by exciting surface plasmon polariton (SPP) and participate in imaging, which can break through the diffraction limit in conventional lithography. It provides a reliable technical way for the study of low-cost, large-area and efficient nanolithography technology. However, there is also a phenomenon in plasmonic lithography similar to the forbidden pitch in conventional projection lithography. In this paper, combined with the imaging model and the optical transfer function (OTF), the theoretical analysis points out the reasons for the existence of the phenomenon of forbidden pitch in plasmonic lithography. Taking the 365 nm wavelength Ag thin film-based superlens imaging lithography as an example, the positions of the forbidden pitches of the 1:1 mask, the bright-field mask and the dark-field mask are calculated separately, and the key factors affecting their positions are pointed out. Simulation is carried out through commercial software, and the correctness of theoretical analysis is verified. Finally, we summarize and give some possible suggestions for solving this problem, including exploring better illumination methods, avoiding the patterns with forbidden pitch in the design, or by adding assistant feature to the design.
Funder
Scientific Research Foundation of the University of Chinese Academy of Sciences
Guangdong Province Research and Development Program in Key Fields
A high-level innovation research institute from Guangdong Greater Bay Area Institute of Integrated Circuit and System
The construction of new research and development institutions
Guangzhou City Research and Development Program in Key Fields
Subject
Atomic and Molecular Physics, and Optics
Cited by
2 articles.
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