Dilute-Nitride Active Regions on GaSb for Mid-Infrared Semiconductor Diode Lasers
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OSA
Reference8 articles.
1. 3.6 [micro sign]m GaSb-based type-I lasers with quinternary barriers, operating at room temperature
2. InGaAsSbN: A dilute nitride compound for midinfrared optoelectronic devices
3. High power 2.4μm heavily strained type-I quantum well GaSb-based diode lasers with more than 1W of continuous wave output power and a maximum power-conversion efficiency of 17.5%
4. Effects of N incorporation on the structural and photoluminescence characteristics of GaSbN/GaSb single quantum wells
5. Study of molecular beam epitaxially grown InGaAsSbN/GaSb single quantum wells
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