Study of molecular beam epitaxially grown InGaAsSbN/GaSb single quantum wells-Reference-Cited by-同舟云学术

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Study of molecular beam epitaxially grown InGaAsSbN/GaSb single quantum wells

Published:2011-05 Issue:3 Volume:29 Page:03C112
ISSN:2166-2746
Container-title:Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
language:en
Short-container-title:Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena

Author:

Bharatan Sudhakar,Iyer Shanthi,Li Jia,Rawdanowicz Thomas A.,Reynolds Lewis

Publisher

American Vacuum Society

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Process Chemistry and Technology,Instrumentation,Electronic, Optical and Magnetic Materials

Link

http://avs.scitation.org/doi/pdf/10.1116/1.3555368

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Influence of atom segregation on the structure and luminescence of InGaAsSb/AlGaAsSb multiple quantum wells;Journal of Luminescence;2022-09

2. Characterization of GaSb thin films with excess Ga grown by RF magnetron sputtering;International Journal of Modern Physics B;2020-04-20

3. Next-generation mid-infrared sources;Journal of Optics;2017-11-14

4. Structural and optical studies of nitrogen incorporation into GaSb-based GaInSb quantum wells;Applied Physics Letters;2012-01-09

5. Dilute-Nitride Active Regions on GaSb for Mid-Infrared Semiconductor Diode Lasers;Conference on Lasers and Electro-Optics 2012;2012

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