High-reflection Mo/Be/Si multilayers for EUV lithography-Reference-Cited by-同舟云学术

High-reflection Mo/Be/Si multilayers for EUV lithography

Published:2017-12-05 Issue:24 Volume:42 Page:5070
ISSN:0146-9592
Container-title:Optics Letters
language:en
Short-container-title:Opt. Lett.

Author:

Chkhalo Nikolai I.,Gusev Sergei A.,Nechay Andrey N.,Pariev Dmitry E.,Polkovnikov Vladimir N.,Salashchenko Nikolai N.,Schäfers Franz,Sertsu Mewael G.,Sokolov Andrey,Svechnikov Mikhail V.,Tatarsky Dmitry A.

Funder

Russian Foundation for Basic Research (RFBR)

Russian Science Foundation (RSF)

Deutsche Forschungsgemeinschaft (DFG)

Publisher

The Optical Society

Subject

Atomic and Molecular Physics, and Optics

Reference21 articles.

1. The future of EUV lithography: enabling Moore's Law in the next decade

2. Scaling LPP EUV sources to meet high volume manufacturing requirements (Conference Presentation)

3. Improved reflectance and stability of Mo-Si multilayers

4. Mo/Si Multilayers with Different Barrier Layers for Applications as Extreme Ultraviolet Mirrors

5. Enhanced reflectance of interface engineered Mo/Si multilayers produced by thermal particle deposition

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