External stress effects on the optical and electrical properties of flexible InGaN-based green light-emitting diodes-Reference-Cited by-同舟云学术

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External stress effects on the optical and electrical properties of flexible InGaN-based green light-emitting diodes

Published:2015-11-23 Issue:24 Volume:23 Page:31334
ISSN:1094-4087
Container-title:Optics Express
language:en
Short-container-title:Opt. Express

Author:

Horng Ray-Hua,Tien Ching-Ho,Chuang Shih-Hao,Liu Keng-Chen,Wuu Dong-Sing

Funder

Hsin Chu Science Park, Taiwan

Ministry of Science and Technology, Taiwan (MOST)

Publisher

The Optical Society

Subject

Atomic and Molecular Physics, and Optics

Reference23 articles.

1. Solid-State Light Sources Getting Smart

2. Research challenges to ultra-efficient inorganic solid-state lighting

3. III-Nitride Photonics

4. Composition dependence of polarization fields in GaInN/GaN quantum wells

5. Thermal stress in GaN epitaxial layers grown on sapphire substrates

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1. 20 µm Micro‐LEDs Mass Transfer via Laser‐Induced In Situ Nanoparticles Resonance Enhancement;Small;2024-02-08

2. Wafer-scale transfer route for top–down III-nitride nanowire LED arrays based on the femtosecond laser lift-off technique;Microsystems & Nanoengineering;2021-04-23

3. Layer-Scale and Chip-Scale Transfer Techniques for Functional Devices and Systems: A Review;Nanomaterials;2021-03-25

4. Ultrashort Pulse Laser Lift-Off Processing of InGaN/GaN Light-Emitting Diode Chips;ACS Applied Electronic Materials;2021-01-20

5. Optically invariant InGaN nanowire light-emitting diodes on flexible substrates under mechanical manipulation;npj Flexible Electronics;2019-08-19

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