Affiliation:
1. Linköping University
2. National Taiwan University of Science and Technology
3. National Yang Ming Chiao Tung University
Abstract
Electronic grade ZnGa2O4 epitaxial thin films were grown on c-plane sapphire substrates by metal-organic chemical vapor deposition and investigated using spectroscopic ellipsometry. Their thickness, roughness and optical properties were determined using a Multiple Sample Analysis based approach by the regression analysis of optical model and measured data. These samples were then compared to samples which had undergone ion etching, and it was observed that etching time up to four minutes had no discernible impact on its optical properties. Line shape analysis of resulting absorption coefficient dispersion revealed that ZnGa2O4exhibited both direct and indirect interband transitions. The modified Cody formalism was employed to determine their optical bandgaps. These values were found to be in good agreement with values obtained using other popular bandgap extrapolation procedures.
Funder
Vetenskapsrådet
Stiftelsen för Strategisk Forskning
STINT foundation
Wafer Works Corporation and Ministry of Science and Technology
MAtek
Subject
Electronic, Optical and Magnetic Materials
Cited by
7 articles.
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