Formation of quaternary <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" altimg="si1.svg"><mml:mi>Zn</mml:mi><mml:msub><mml:mrow><mml:mo>(</mml:mo><mml:msub><mml:mi>Al</mml:mi><mml:mi mathvariant="normal">x</mml:mi></mml:msub><mml:msub><mml:mi>Ga</mml:mi><mml:mrow><mml:mn>1</mml:mn><mml:mo>−</mml:mo><mml:mi mathvariant="normal">x</mml:mi></mml:mrow></mml:msub><mml:mo>)</mml:mo></mml:mrow><mml:mn>2</mml:mn></mml:msub><mml:msub><mml:mi mathvariant="normal">O</mml:mi><mml:mn>4</mml:mn></mml:msub></mml:math> epilayers driven by thermally induced interdiffusion between spinel <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" altimg="si2.svg"><mml:msub><mml:mi>ZnGa</mml:mi><mml:mn>2</mml:mn></mml:msub><mml:msub><mml:mi mathvariant="normal">O</mml:mi><mml:mn>4</mml:mn></mml:msub></mml:math> epilayer and <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" altimg="si3.svg"><mml:msub><mml:mi>Al</mml:mi><mml:mn>2</mml:mn></mml:msub><mml:msub><mml:mi mathvariant="normal">O</mml:mi><mml:mn>3</mml:mn></mml:msub></mml:math> substrate-Reference-Cited by-同舟云学术

Formation of quaternary Zn(AlxGa1−x)2O4 epilayers driven by thermally induced interdiffusion between spinel ZnGa2O4 epilayer and Al2O3 substrate

Published:2023-12 Issue: Volume:20 Page:100422
ISSN:2590-0498
Container-title:Materials Today Advances
language:en
Short-container-title:Materials Today Advances

Author:

Bairagi Samiran^ORCID,Chang Jui-Che,Tarntair Fu-Gow,Wu Wan-Yu,Gueorguiev Gueorgui K.,de Almeida Edward Ferraz,Magnusson Roger,Lin Kun-Lin,Hsu Shao-Hui,Shieh Jia-Min,Birch Jens,Horng Ray-Hua,Järrendahl Kenneth,Hsiao Ching-Lien

Publisher

Elsevier BV

Subject

Mechanical Engineering,General Materials Science

Reference43 articles.

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3. Wide range tunable bandgap and composition β -phase (AlGa)2O3thin film by thermal annealing;Liao;Appl. Phys. Lett.,2021

4. Recent progress in Ga2O3 power devices;Higashiwaki;Semicond. Sci. Technol.,2016

5. Recent progress in solar-blind deep-ultraviolet photodetectors based on inorganic ultrawide bandgap semiconductors;Xie;Adv. Funct. Mater.,2019

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