Photoluminescence characterization in silicon nanowire fabricated by thermal oxidation of nano-scale Si fin structure-Reference-Cited by-同舟云学术

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Photoluminescence characterization in silicon nanowire fabricated by thermal oxidation of nano-scale Si fin structure

Published:2014-01-23 Issue:2 Volume:22 Page:1997
ISSN:1094-4087
Container-title:Optics Express
language:en
Short-container-title:Opt. Express

Author:

Sakurai Yoko,Kakushima Kuniyuki,Ohmori Kenji,Yamada Keisaku,Iwai Hiroshi,Shiraishi Kenji,Nomura Shintaro

Funder

Ministry of Education, Culture, Sports, Science, and Technology (MEXT)

New Energy and Industrial Technology Development Organisation (NEDO)

Publisher

The Optical Society

Subject

Atomic and Molecular Physics, and Optics

Reference30 articles.

1. Roadmap for 22nm and beyond (Invited Paper)

2. Structural advantages of rectangular-like channel cross-section on electrical characteristics of silicon nanowire field-effect transistors

3. Silicon nanowire tunneling field-effect transistors

4. Impact of the dimensionality on the performance of tunneling FETs: Bulk versus one-dimensional devices

5. High Performance Silicon Nanowire Field Effect Transistors

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Structural and optical properties of nc-Si in SiOxNy matrix deposited by laser ablation for optoelectronic applications;Materials Science in Semiconductor Processing;2019-03

2. Fabrication of single-crystal silicon nanotubes with sub-10 nm walls using cryogenic inductively coupled plasma reactive ion etching;Nanotechnology;2016-08-01

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