Structural and optical properties of nc-Si in SiOxNy matrix deposited by laser ablation for optoelectronic applications-Reference-Cited by-同舟云学术

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Structural and optical properties of nc-Si in SiOxNy matrix deposited by laser ablation for optoelectronic applications

Published:2019-03 Issue: Volume:91 Page:377-382
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Camps Enrique,Campos-Gonzalez E.,Restrepo Johans^ORCID,Dutt A.,Santana G.^ORCID

Funder

CONACYT

DGAPA-UNAM PAPIIT

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference34 articles.

1. Visible photoluminescence from porous silicon: a quantum confinement effect mainly due to holes?;Voos;Appl. Phys. Lett.,1992

2. Mesostructure of photoluminescent porous silicon;Ruiz;J. Vac. Sci. Technol. A,1994

3. Optical gain in silicon nanocrystals;Pavesi;Nature,2000

4. An all-silicon Raman laser;Rong;Nature,2005

5. Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers;Canham;Appl. Phys. Lett.,1990

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