Extraction of recombination coefficients and internal quantum efficiency of GaN-based light emitting diodes considering effective volume of active region-Reference-Cited by-同舟云学术

Extraction of recombination coefficients and internal quantum efficiency of GaN-based light emitting diodes considering effective volume of active region

Published:2014-01-13 Issue:2 Volume:22 Page:1235
ISSN:1094-4087
Container-title:Optics Express
language:en
Short-container-title:Opt. Express

Author:

Kim Garam,Kim Jang Hyun,Park Euy Hwan,Kang Donghoon,Park Byung-Gook

Funder

Samsung

Publisher

The Optical Society

Subject

Atomic and Molecular Physics, and Optics

Reference20 articles.

1. Recent Progress in GaN-Based Light-Emitting Diodes

2. Polarization-matched GaInN∕AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop

3. On the efficiency droop in InGaN multiple quantum well blue light emitting diodes and its reduction with p-doped quantum well barriers

4. Effect of electron blocking layer on efficiency droop in InGaN/GaN multiple quantum well light-emitting diodes

5. Density-activated defect recombination as a possible explanation for the efficiency droop in GaN-based diodes

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