Carrier Transport and Radiative Recombination Rate Enhancement in GaN/AlGaN Multiple Quantum Well UV-LED Using Band Engineering for Light Technology
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Springer Nature Singapore
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https://link.springer.com/content/pdf/10.1007/978-981-19-2308-1_20
Reference20 articles.
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3. Nagasawa Y, Hirano A (2018) A review of AlGaN-based deep-ultraviolet light-emitting diodes on sapphire. Appl Sci 8(8). https://doi.org/10.3390/app8081264
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1. Efficiency and radiative recombination rate enhancement in GaN/AlGaN multi-quantum well-based electron blocking layer free UV-LED for improved luminescence;Facta universitatis - series: Electronics and Energetics;2023
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