Performance improvement of GaN-based LEDs with step stage InGaN/GaN strain relief layers in GaN-based blue LEDs
Author:
Publisher
The Optical Society
Subject
Atomic and Molecular Physics, and Optics
Reference22 articles.
1. Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes
2. Room-temperature continuous-wave operation of InGaN multi-quantum-well structure laser diodes with a lifetime of 27 hours
3. The Roles of Structural Imperfections in InGaN-Based Blue Light-Emitting Diodes and Laser Diodes
4. Light Emitting Diode with Charge Asymmetric Resonance Tunneling
5. Determination of piezoelectric fields in strained GaInN quantum wells using the quantum-confined Stark effect
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4. Detection of hot electrons originating from an upper valley at ∼1.7eV above the Γ valley in wurtzite GaN using electron emission spectroscopy;Physical Review B;2023-01-06
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