Different surface plasmon coupling behaviors of a surface Al nanoparticle between TE and TM polarizations in a deep-UV light-emitting diode
Author:
Funder
Air Force Office of Scientific Research (AFOSR)
Ministry of Science and Technology, Taiwan (MOST)
Publisher
The Optical Society
Subject
Atomic and Molecular Physics, and Optics
Reference48 articles.
1. Marked Enhancement in the Efficiency of Deep-Ultraviolet AlGaN Light-Emitting Diodes by Using a Multiquantum-Barrier Electron Blocking Layer
2. Advances in group III-nitride-based deep UV light-emitting diode technology
3. AlGaN Deep-Ultraviolet Light-Emitting Diodes with External Quantum Efficiency above 10%
4. Deep ultraviolet emitting polarization induced nanowire light emitting diodes with AlxGa1−xN active regions
5. Deep-ultraviolet light-emitting diodes with external quantum efficiency higher than 20% at 275 nm achieved by improving light-extraction efficiency
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