Effect of Auger recombination and leakage on the droop in InGaN/GaN quantum well LEDs
Author:
Publisher
The Optical Society
Subject
Atomic and Molecular Physics, and Optics
Reference27 articles.
1. High-Power and High-Efficiency InGaN-Based Light Emitters
2. Efficiency droop in nitride-based light-emitting diodes
3. Efficiency droop in light-emitting diodes: Challenges and countermeasures
4. Carrier mobility model for GaN
5. Auger carrier leakage in III-nitride quantum-well light emitting diodes
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