Auger carrier leakage in III-nitride quantum-well light emitting diodes
Author:
Funder
SMASH EU project
Publisher
Wiley
Subject
Condensed Matter Physics,General Materials Science
Link
http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssr.201206367/fullpdf
Reference13 articles.
1. Droop in InGaN light-emitting diodes: A differential carrier lifetime analysis
2. Auger recombination in GaInN/GaN quantum well laser structures
3. Carrier recombination mechanisms and efficiency droop in GaInN/GaN light-emitting diodes
4. Efficiency droop in nitride-based light-emitting diodes
5. A theoretical analysis of Auger recombination induced energetic carrier leakage in GaInAsP/InP double heterojunction lasers and light emitting diodes
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