Optical properties of oxygen vacancies in HfO2 thin films studied by absorption and luminescence spectroscopy-Reference-Cited by-同舟云学术

Optical properties of oxygen vacancies in HfO2 thin films studied by absorption and luminescence spectroscopy

Published:2018-06-21 Issue:13 Volume:26 Page:17608
ISSN:1094-4087
Container-title:Optics Express
language:en
Short-container-title:Opt. Express

Author:

Papernov S.,Brunsman M. D.,Oliver J. B.,Hoffman B. N.,Kozlov A. A.,Demos S. G.,Shvydky A.,Cavalcante F. H. M.,Yang L.,Menoni C. S.^ORCID,Roshanzadeh B.^ORCID,Boyd S. T. P.,Emmert L. A.,Rudolph W.

Funder

U.S. Department of Energy (DOE)

Publisher

The Optical Society

Subject

Atomic and Molecular Physics, and Optics

Reference28 articles.

1. Optimization of laser-damage resistance of evaporated hafnia films at 351nm

2. Review on high-k dielectrics reliability issues

3. Charge-transition levels of oxygen vacancy as the origin of device instability in HfO2 gate stacks through quasiparticle energy calculations

4. Transient phenomena in the dielectric breakdown of HfO2 optical films probed by ultrafast laser pulse pairs

5. Modeling the effect of native and laser-induced states on the dielectric breakdown of wide band gap optical materials by multiple subpicosecond laser pulses

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