Charge-transition levels of oxygen vacancy as the origin of device instability in HfO2 gate stacks through quasiparticle energy calculations
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3106643
Reference19 articles.
1. Fermi-Level Pinning at the Polysilicon/Metal–Oxide Interface—Part II
2. Review on high-k dielectrics reliability issues
3. Carrier Transportation Mechanism of the $\hbox{TaN}/ \hbox{HfO}_{2}/\hbox{IL}/\hbox{Si}$ Structure With Silicon Surface Fluorine Implantation
4. Current transport in metal/hafnium oxide/silicon structure
5. Oxygen Vacancy Induced Substantial Threshold Voltage Shifts in the Hf-based High-KMISFET with p+poly-Si Gates -A Theoretical Approach
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