Determination of Type and Concentration of Traps in Nanoscale-Thick HfO2 Films Applicable for Gate Dielectric Stacks
Author:
Affiliation:
1. Ioffe Institute, Polytekhnicheskaya st. 26, Saint Petersburg 194021, Russia
Funder
Russian Science Foundation
Publisher
American Chemical Society (ACS)
Subject
General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/acsanm.3c02178
Reference41 articles.
1. High dielectric constant gate oxides for metal oxide Si transistors
2. Application and electronic structure of high-permittivity dielectrics
3. Improvement in Self-Heating Characteristic by Incorporating Hetero-Gate-Dielectric in Gate-All-Around MOSFETs
4. Achieving a Low-Voltage, High-Mobility IGZO Transistor through an ALD-Derived Bilayer Channel and a Hafnia-Based Gate Dielectric Stack
5. Discrete charge states in nanowire flash memory with multiple Ta2O5 charge-trapping stacks
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