Study of planar defect filtering in InP grown on Si by epitaxial lateral overgrowth-Reference-Cited by-同舟云学术

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Study of planar defect filtering in InP grown on Si by epitaxial lateral overgrowth

Published:2013-10-25 Issue:11 Volume:3 Page:1960
ISSN:2159-3930
Container-title:Optical Materials Express
language:en
Short-container-title:Opt. Mater. Express

Author:

Junesand Carl,Kataria Himanshu,Metaferia Wondwosen,Julian Nick,Wang Zhechao,Sun Yan-Ting,Bowers John,Pozina Galia,Hultman Lars,Lourdudoss Sebastian

Funder

European Commission (EC)

Intel Corporation (Intel)

Swedish Foundation for Strategic Research (SSF)

Vinnova (VINNOVA)

Publisher

The Optical Society

Subject

Electronic, Optical and Magnetic Materials

Reference30 articles.

1. Si (001) surface preparation for the antiphase domain free heteroepitaxial growth of GaP on Si substrate

2. Selective Area Growth of InP on On-Axis Si(001) Substrates with Low Antiphase Boundary Formation

3. Nanocontact heteroepitaxy of thin GaSb and AlGaSb films on Si substrates using ultrahigh-density nanodot seeds

4. Uniformity improvement of selectively-grown InGaAs micro-discs on Si

5. GaP-nucleation on exact Si (001) substrates for III/V device integration

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1. Large-area InP laterally grown on SOI for Micro-lasers and Fabry-Perot lasers;CLEO 2023;2023

2. Graphene nanopattern as a universal epitaxy platform for single-crystal membrane production and defect reduction;Nature Nanotechnology;2022-09-22

3. Principles of Selective Area Epitaxy and Applications in III–V Semiconductor Lasers Using MOCVD: A Review;Crystals;2022-07-21

4. Topical review: pathways toward cost-effective single-junction III–V solar cells;Journal of Physics D: Applied Physics;2021-12-03

5. Defect engineering for high quality InP epitaxially grown on on-axis (001) Si;Journal of Applied Physics;2020-01-21

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