Growth of large-area atomically thin MoS_2 film via ambient pressure chemical vapor deposition-Reference-Cited by-同舟云学术

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Growth of large-area atomically thin MoS_2 film via ambient pressure chemical vapor deposition

Published:2015-05-07 Issue:4 Volume:3 Page:110
ISSN:2327-9125
Container-title:Photonics Research
language:en
Short-container-title:Photon. Res.

Author:

Chen Caiyun,Qiao Hong,Xue Yunzhou,Yu Wenzhi,Song Jingchao,Lu Yao,Li Shaojuan,Bao Qiaoliang

Funder

ARC DECRA

ARC DP

China Postdoctoral Science Foundation

Doctoral Fund of Ministry of Education of China

Jiangsu Province Postdoctoral Science Foundation

National High Technology Research and Development Program of China (863 Program)

National Natural Science Foundation of China (NSFC)

Natural Science Foundation of Jiangsu Province

Youth 973 program

Publisher

The Optical Society

Subject

Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference28 articles.

1. Breakdown of High-Performance Monolayer MoS2 Transistors

2. Transport Properties of Monolayer MoS2 Grown by Chemical Vapor Deposition

3. Intrinsic Electronic Transport Properties of High-Quality Monolayer and Bilayer MoS2

4. Emerging Photoluminescence in Monolayer MoS2

5. Single-layer MoS2 transistors

Cited by 18 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Exploration of Molybdenum Disulfide Nanostructures Through Raman Mode Detection;Springer Proceedings in Materials;2023-11-21

2. CVD Synthesis of MoS2 Using a Direct MoO2 Precursor: A Study on the Effects of Growth Temperature on Precursor Diffusion and Morphology Evolutions;Materials;2023-07-04

3. Manipulating mechanical properties of CaTiO₃:Eu³⁺ flexible fiber membrane by fiber design;Journal of the American Ceramic Society;2023-06-22

4. Large-area growth of MoS2 at temperatures compatible with integrating back-end-of-line functionality;2D Materials;2020-12-22

5. Growth Mechanism of Continuous Monolayer MoS2 Prepared by Chemical Vapor Deposition;IOP Conference Series: Materials Science and Engineering;2019-06-01

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