Intrinsic Electronic Transport Properties of High-Quality Monolayer and Bilayer MoS2
Author:
Affiliation:
1. Department of Physics, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, Massachusetts 02139, United States
Publisher
American Chemical Society (ACS)
Subject
Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering
Link
https://pubs.acs.org/doi/pdf/10.1021/nl401916s
Reference37 articles.
1. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
2. Stretching and Breaking of Ultrathin MoS2
3. High-mobility field-effect transistors based on transition metal dichalcogenides
4. Two-dimensional atomic crystals
5. Atomically ThinMoS2: A New Direct-Gap Semiconductor
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