Large-area growth of MoS2 at temperatures compatible with integrating back-end-of-line functionality-Reference-Cited by-同舟云学术

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Large-area growth of MoS2 at temperatures compatible with integrating back-end-of-line functionality

Published:2020-12-22 Issue:2 Volume:8 Page:025008
ISSN:2053-1583
Container-title:2D Materials
language:
Short-container-title:2D Mater.

Author:

Lin Jun^ORCID,Monaghan Scott^ORCID,Sakhuja Neha,Gity Farzan^ORCID,Jha Ravindra Kumar,Coleman Emma M,Connolly James,Cullen Conor P,Walsh Lee A^ORCID,Mannarino Teresa,Schmidt Michael,Sheehan Brendan,Duesberg Georg S,McEvoy Niall^ORCID,Bhat Navakanta,Hurley Paul K,Povey Ian M^ORCID,Bhattacharjee Shubhadeep

Funder

Indian Institute of Science

Ministry of Human Resource Development

Science Foundation Ireland

H2020 Future and Emerging Technologies

H2020 Marie Skłodowska-Curie Actions

Science and Engineering Research Board

Publisher

IOP Publishing

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science,General Chemistry

Link

https://iopscience.iop.org/article/10.1088/2053-1583/abc460/pdf

Reference111 articles.

1. Roll-to-roll production of 30-inch graphene films for transparent electrodes

2. BEOL compatible graphene/Cu with improved electromigration lifetime for future interconnects

3. Photonics and optoelectronics of 2D semiconductor transition metal dichalcogenides

4. Two-dimensional transition metal dichalcogenides as atomically thin semiconductors: opportunities and challenges

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1. Interface chemistry, band alignment, and thermal stability study of Sn metal contact on bulk and monolayer MoS2;Journal of Vacuum Science & Technology B;2024-08-13

2. Homoatomic flatlands beyond graphene: A new avenue for gas sensors;Coordination Chemistry Reviews;2024-05

3. Suppressing Threshold Voltage Drift in Sub-2 nm In₂O₃ Transistors With Improved Thermal Stability;IEEE Electron Device Letters;2024-01

4. Laser induced crystallization of sputtered MoS2 thin films;Materials Science in Semiconductor Processing;2023-09

5. Study on the properties of wafer-scale grown MoS₂ deposited via thermally induced chemical vapor deposition with Mo(CO)₆ and H₂S precursors;Materials Research Express;2023-09-01

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