Explanation of low efficiency droop in semipolar (202¯1¯) InGaN/GaN LEDs through evaluation of carrier recombination coefficients-Reference-Cited by-同舟云学术

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Explanation of low efficiency droop in semipolar (202¯1¯) InGaN/GaN LEDs through evaluation of carrier recombination coefficients

Published:2017-08-01 Issue:16 Volume:25 Page:19343
ISSN:1094-4087
Container-title:Optics Express
language:en
Short-container-title:Opt. Express

Author:

Monavarian Morteza,Rashidi Arman,Aragon Andrew,Oh Sang H.,Nami Mohsen,DenBaars Steve P.,Feezell Daniel

Funder

National Science Foundation (NSF)

Solid State Lighting and Energy Electronics Center, University of California Santa Barbara (SSLEEC)

U.S. Department of Defense (DOD)

Publisher

The Optical Society

Subject

Atomic and Molecular Physics, and Optics

Reference42 articles.

1. High-Power Blue-Violet Semipolar ($20\bar{2}\bar{1}$) InGaN/GaN Light-Emitting Diodes with Low Efficiency Droop at 200 A/cm$^{2}$

2. High-Power, Low-Efficiency-Droop Semipolar ($20\bar{2}\bar{1}$) Single-Quantum-Well Blue Light-Emitting Diodes

3. Semipolar $({\hbox{20}}\bar{{\hbox{2}}}\bar{{\hbox{1}}})$ InGaN/GaN Light-Emitting Diodes for High-Efficiency Solid-State Lighting

4. Influence of polarity on carrier transport in semipolar (2021¯) and (202¯1) multiple-quantum-well light-emitting diodes

5. Highly polarized photoluminescence and its dynamics in semipolar (202¯1¯) InGaN/GaN quantum well

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