Electrical properties of single delta-doped InGaP/InGaAs/GaAs pseudomorphic HEMT with camel-like gate structure
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,General Materials Science
Reference10 articles.
1. A pseudomorphic AlGaAs/n/sup +/-InGaAs metal-insulator-doped channel FET for broad-band, large-signal applications
2. Performance enhancement in a metal‐insulator‐semiconductor–like pseudomorphic transistor by utilizing an n−‐GaAs/n+‐In0.2Ga0.8As two‐layer structure
3. Investigation of the electron transfer characteristics in multi-δ-doped GaAs FET's
4. A δ‐doped GaAs/graded InxGa1−xAs/GaAs pseudomorphic structure grown by low‐pressure metal organic chemical vapor deposition
5. Low‐temperature dc characteristics of S‐ and Si‐doped Ga0.51In0.49P/GaAs high electron mobility transistors grown by metalorganic molecular beam epitaxy
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1. The study of gate length AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor;MATER RES PROC;2016
2. Influence of gate thermal oxide layer on InGaP/InGaAs doping-channel field-effect transistors;Materials Chemistry and Physics;2012-03
3. Comparative investigation of InGaP/GaAs pseudomorphic field-effect transistors with triple doped-channel profiles;Semiconductors;2011-09
4. Catalytic Production of Carbon Nanotubes by Fluidized-Bed CVD;Chemical Vapor Deposition;2007-09
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