A δ‐doped GaAs/graded InxGa1−xAs/GaAs pseudomorphic structure grown by low‐pressure metal organic chemical vapor deposition
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.106349
Reference11 articles.
1. Electron mobilities in modulation‐doped semiconductor heterojunction superlattices
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3. Improved strained HEMT characteristics using double-heterojunction In/sub 0.65/Ga/sub 0.35/As/In/sub 0.52/Al/sub 0.48/As design
4. An In0.15Ga0.85As/GaAs pseudomorphic single quantum well HEMT
5. Novel pseudomorphic high electron mobility transistor structures with GaAs‐In0.3Ga0.7As thin strained superlattice active layers
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1. Temperature-dependent photoreflectance and photoluminescence characterization of the subband structure and built-in electric field of GaAs/GaInAs graded-channel high electron mobility transistor structures;Semiconductor Science and Technology;2009-02-16
2. Photoreflectance and Photoluminescence Study of In[sub x]Ga[sub 1−x]As∕GaAs Graded-Channel High Electron Mobility Transistors;Journal of The Electrochemical Society;2006
3. Practical photoluminescence and photoreflectance spectroscopic system for optical characterization of semiconductor devices;Optics Express;2005
4. Electrical properties of single delta-doped InGaP/InGaAs/GaAs pseudomorphic HEMT with camel-like gate structure;Materials Chemistry and Physics;2003-12
5. Investigation of a graded channel InGaAs/GaAs heterostructure transistor;Superlattices and Microstructures;2000-07
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