Influence of gate thermal oxide layer on InGaP/InGaAs doping-channel field-effect transistors
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,General Materials Science
Reference17 articles.
1. Comprehensive Characterization of AlGaAs∕InGaAs∕GaAs Composite-Channel High-Electron Mobility Transistor
2. Extremely low-noise amplification with cryogenic FETs and HFETs: 1970-2004
3. Integration of enhancement/depletion- mode InGaP/InGaAs doped-channel pseudomorphic HFETs for direct-coupled FET logic application
4. Investigation of temperature-dependent characteristics of an n/sup +/-InGaAs/n-GaAs composite doped channel HFET
5. An analytical model for high electron mobility transistors
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1. Performance and direct-coupled FET logic applications of InAlAs/InGaAs co-integrated field-effect transistors by 2-D simulation;Thin Solid Films;2013-11
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