Investigation of temperature-dependent characteristics of an n/sup +/-InGaAs/n-GaAs composite doped channel HFET-Reference-Cited by-同舟云学术

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Investigation of temperature-dependent characteristics of an n/sup +/-InGaAs/n-GaAs composite doped channel HFET

Published:2001-12 Issue:12 Volume:48 Page:2677-2683
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Wen-Chau Liu ,Kuo-Hui Yu ,Rong-Chau Liu ,Kun-Wei Lin ,Kuan-Po Lin ,Chih-Hung Yen ,Chin-Chuan Cheng ,Kong-Beng Thei

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/21013/00974689.pdf?arnumber=974689

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3. Reliability Studies on High-Temperature Operation of Mixed As/Sb Staggered Gap Tunnel FET Material and Devices;IEEE Transactions on Device and Materials Reliability;2014-03

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